Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)

DC 欄位	值	語言
dc.contributor	物理研究所	-
dc.contributor.author	Harvey N. Cruzado	-
dc.contributor.author	John Symon C. Dizon	-
dc.contributor.author	Gennevieve M. Macam	-
dc.contributor.author	Rovi Angelo B. Villaos	-
dc.contributor.author	Thi My Duyen Huynh	-
dc.contributor.author	Liang-Ying Feng	-
dc.contributor.author	Zhi-Quan Huang	-
dc.contributor.author	Chia-Hsiu Hsu	-
dc.contributor.author	Shin-Ming Huang	-
dc.contributor.author	Hsin Lin	-
dc.contributor.author	Feng-Chuan Chuang	-
dc.date.accessioned	2023-03-29T06:27:32Z	-
dc.date.available	2023-03-29T06:27:32Z	-
dc.date.issued	2021	-
dc.identifier.issn	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2637-6113&DestApp=JCR&RQ=IF_CAT_BOXPLOT	-
dc.identifier.uri	http://ir.sinica.edu.tw/handle/201000000A/85405	-
dc.description.sponsorship	物理研究所	-
dc.language.iso	en	-
dc.relation.ispartof	ACS Applied Electronic Materials 3(3), 1071-1079	-
dc.title	Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)	-
dc.type	journal article	-
dc.identifier.url	http://dx.doi.org/10.1021/acsaelm.0c00907	-
dc.description.note	已出版;沒有審查制度	-
item.languageiso639-1	en	-
item.openairetype	journal article	-
item.cerifentitytype	Publications	-
item.grantfulltext	none	-
item.openairecristype	http://purl.org/coar/resource_type/c_6501	-
item.fulltext	no fulltext	-
crisitem.author.dept	Institute of Physics	-
crisitem.author.parentorg	Division of Mathematics and Physical Sciences	-
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