Deep-level emissions in GaAsN∕GaAs structures grown by metal organic chemical vapor deposition

DC 欄位	值	語言
dc.contributor	物理研究所	-
dc.contributor.author	Chen, J. F.	-
dc.contributor.author	Ke, C. T.	-
dc.contributor.author	Hsieh, P. C.	-
dc.contributor.author	Chiang, C. H.	-
dc.contributor.author	Lee, W. I.	-
dc.contributor.author	Lee, S. C.	-
dc.date.accessioned	2023-03-29T06:27:23Z	-
dc.date.available	2023-03-29T06:27:23Z	-
dc.date.issued	2007	-
dc.identifier.issn	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT	-
dc.identifier.uri	http://ir.sinica.edu.tw/handle/201000000A/85350	-
dc.description.sponsorship	物理研究所	-
dc.language.iso	en	-
dc.relation.ispartof	Journal of Applied Physics 101(12), 123515	-
dc.title	Deep-level emissions in GaAsN∕GaAs structures grown by metal organic chemical vapor deposition	-
dc.type	journal article	-
dc.identifier.url	http://dx.doi.org/10.1063/1.2748613	-
dc.description.note	已出版;[SCI];有審查制度	-
item.fulltext	no fulltext	-
item.openairecristype	http://purl.org/coar/resource_type/c_6501	-
item.grantfulltext	none	-
item.openairetype	journal article	-
item.languageiso639-1	en	-
item.cerifentitytype	Publications	-
crisitem.author.dept	Institute of Physics	-
crisitem.author.parentorg	Division of Mathematics and Physical Sciences	-
顯示於：	物理研究所

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