Surface electron accumulation and enhanced hydrogen evolution reaction in MoSe2 basal planes

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/85144

題名:	Surface electron accumulation and enhanced hydrogen evolution reaction in MoSe2 basal planes
作者:	Chang, Y.S. Chen, C.Y. Ho, C.J. Cheng, C.M. Chen, H.R. Fu, T.Y. Huang, Y.T. Ke, S.W. Du, H.Y. Lee, K.Y. Chao, L.C. Chen, L.C. Chen, K.H. Chu, Y.W. Chen, R.S.
公開日期:	2021-06
關聯:	Nano Energy 84:105922
URI:	http://ir.sinica.edu.tw/handle/201000000A/85144
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2211-2855&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1016/j.nanoen.2021.105922
顯示於：	原子與分子科學研究所

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