http://ir.sinica.edu.tw/handle/201000000A/78612| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor | 應用科學研究中心 | - |
| dc.contributor.author | Yu-Wei Zhang | - |
| dc.contributor.author | Jun-Yan Li | - |
| dc.contributor.author | Chao-Hsin Wu | - |
| dc.contributor.author | Chiao-Yun Chang | - |
| dc.contributor.author | Shu-Wei Chang | - |
| dc.contributor.author | Min-Hsiung Shih | - |
| dc.contributor.author | Shih-Yen Lin | - |
| dc.date.accessioned | 2021-08-12T01:58:28Z | - |
| dc.date.available | 2021-08-12T01:58:28Z | - |
| dc.date.issued | 2020-04-06 | - |
| dc.identifier.issn | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2045-2322&DestApp=JCR&RQ=IF_CAT_BOXPLOT | - |
| dc.identifier.uri | http://ir.sinica.edu.tw/handle/201000000A/78612 | - |
| dc.description.sponsorship | 應用科學研究中心 | - |
| dc.language.iso | en | - |
| dc.relation.ispartof | SCIENTIFIC REPORTS 10, 5967 | - |
| dc.title | Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures | - |
| dc.type | journal article | - |
| dc.identifier.url | http://dx.doi.org/10.1038/s41598-020-63098-1 | - |
| dc.description.note | 已出版;[SCI];有審查制度 | - |
| item.languageiso639-1 | en | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.grantfulltext | none | - |
| item.openairetype | journal article | - |
| item.fulltext | no fulltext | - |
| item.cerifentitytype | Publications | - |
| crisitem.author.dept | Research Center for Applied Sciences | - |
| crisitem.author.dept | Research Center for Applied Sciences | - |
| crisitem.author.dept | Research Center for Applied Sciences | - |
| crisitem.author.parentorg | Division of Mathematics and Physical Sciences | - |
| crisitem.author.parentorg | Division of Mathematics and Physical Sciences | - |
| crisitem.author.parentorg | Division of Mathematics and Physical Sciences | - |
| 顯示於： | 應用科學研究中心 | |
在 IR 系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。
