Integration of a (–Cu–S–)n plane in a metal–organic framework affords high electrical conductivity

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/77796

題名:	Integration of a (–Cu–S–)n plane in a metal–organic framework affords high electrical conductivity
作者:	Pathak, Abhishek Shen, Jing-Wen Usman, Muhammad Wei, Ling-Fang Mendiratta, Shruti Chang, Yu-Shin Sainbileg, Batjargal Ngue, Chin-May Chen, Ruei-San Hayashi, Michitoshi Luo, Tzuoo-Tsair Chen, Fu-Rong Chen, Kuei-Hsien Tseng, Tien-Wen Chen, Li-Chyong Lu, Kuang-Lieh
公開日期:	2019-04
關聯:	Nature Communications 10:1721
URI:	http://ir.sinica.edu.tw/handle/201000000A/77796
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2041-1723&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1038/s41467-019-09682-0
顯示於：	原子與分子科學研究所

顯示文件完整紀錄

上周
0

上個月

checked on 2025/5/9

檢查