Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/77716

Title:	Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers
Authors:	C. T. Hsieh P. J. cheng C. H. Lin S. W. Chang
Issue Date:	2019-02-02
Conference:	Photonics West (San Francisco CA, USA : SPIE)
URI:	http://ir.sinica.edu.tw/handle/201000000A/77716
Appears in Collections:	應用科學研究中心

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