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  1. Scholars Hub of the Academia Sinica
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Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/73624
Title: High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes
Authors: Huang, Yu-Ting
Chen, Yi-Hsun
Ho, Yi-Ju
Huang, Shih-Wei
Chang, Yih-Ren
Watanabe, Kenji
Taniguchi, Takashi
Chiu, Hsiang-Chih
Liang, Chi-Te
Sankar, Raman
Chou, Fang-Cheng
Chen, Chun-Wei
Wang, Wei-Hua
Issue Date: 2018-10
Relation: ACS Applied Materials & Interfaces 10(39), 33450-33456
URI: http://ir.sinica.edu.tw/handle/201000000A/73624
ISSN: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL: http://dx.doi.org/10.1021/acsami.8b10576
Appears in Collections:原子與分子科學研究所

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