High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/73624

Title:	High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes
Authors:	Huang, Yu-Ting Chen, Yi-Hsun Ho, Yi-Ju Huang, Shih-Wei Chang, Yih-Ren Watanabe, Kenji Taniguchi, Takashi Chiu, Hsiang-Chih Liang, Chi-Te Sankar, Raman Chou, Fang-Cheng Chen, Chun-Wei Wang, Wei-Hua
Issue Date:	2018-10
Relation:	ACS Applied Materials & Interfaces 10(39), 33450-33456
URI:	http://ir.sinica.edu.tw/handle/201000000A/73624
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1021/acsami.8b10576
Appears in Collections:	原子與分子科學研究所

Show full item record

Last Week
0

Last month
0

checked on Jan 3, 2023

Check