The effect of interfacial structure on the transistor properties: Probing the role of surface modification of gate dielectrics with self-assembled monolayer using organic single-crystal field-effect transistors

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/54210

題名:	The effect of interfacial structure on the transistor properties: Probing the role of surface modification of gate dielectrics with self-assembled monolayer using organic single-crystal field-effect transistors
作者:	Islam, M. M. Pola, S. Tao, Y. T.
公開日期:	2011-06-01
關聯:	ACS Applied Materials & Interfaces 3, 2136-2141
URI:	http://ir.sinica.edu.tw/handle/201000000A/54210
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://pubs.acs.org/doi/pdf/10.1021/am200349j
顯示於：	化學研究所

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