In Situ Vacuum Measurement of the Thickness Dependence of Electron Mobility in Naphthalenetetracarboxylic Diimide-Based Field-Effect Transistors

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/54042

Title:	In Situ Vacuum Measurement of the Thickness Dependence of Electron Mobility in Naphthalenetetracarboxylic Diimide-Based Field-Effect Transistors
Authors:	Liu, Shun-Wei Lee, Chih-Chien Wen, Je-Min Chen, Chin-Ti
Issue Date:	2011-01-01
Relation:	APPLIED PHYSICS LETTERS 98, 023306
URI:	http://ir.sinica.edu.tw/handle/201000000A/54042
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	化學研究所

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