Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44767

Title:	Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
Authors:	M. Junaid D. Lundin J. Palisaitis C. L. Hsiao V. Darakchieva J. Jensen P. O. A. Persson P. Sandstrom W. J. Lai L. C. Chen K. H. Chen U. Helmersson L. Hultman J. Birch
Issue Date:	2011
Relation:	JOURNAL OF APPLIED PHYSICS 110, 123519
URI:	http://ir.sinica.edu.tw/handle/201000000A/44767
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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