Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4 plasma at low temperature

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44765

Title:	Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4 plasma at low temperature
Authors:	D. Das D. Raha W. C. Chen K. H. Chen C. T. Wu L. C. Chen
Issue Date:	2012
Relation:	JOURNAL OF MATERIALS RESEARCH 27, 1303
URI:	http://ir.sinica.edu.tw/handle/201000000A/44765
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0884-2914&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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