Comparison of CVD- and MBE-grown GaN nanowires: crystallinity, photoluminescence, and photoconductivity

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44751

Title:	Comparison of CVD- and MBE-grown GaN nanowires: crystallinity, photoluminescence, and photoconductivity
Authors:	R. S. Chen H. Y. Tsai C. H. Chan Y. S. Huang Y. T. Chen K. H. Chen L. C. Chen
Issue Date:	2014
Relation:	JOURNAL OF ELECTRONIC MATERIALS
URI:	http://ir.sinica.edu.tw/handle/201000000A/44751
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0361-5235&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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