Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44076

Title:	Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition
Authors:	Chen, L. C. Bhusari, D. M. Yang, C. Y. Chen, K. H. Chuang, T. J. Lin, M. C. Chen, C. K. Huang, Y. F.
Issue Date:	1997-07
Relation:	Thin Solid Films 303(1-2), 66-75
URI:	http://ir.sinica.edu.tw/handle/201000000A/44076
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0040-6090&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1016/s0040-6090(97)00041-2
Appears in Collections:	原子與分子科學研究所

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