Band-Gap Dependence of Field Emission From One-Dimensional Nanostructures Grown on N-type and P-type Silicon Substrates.

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43847

Title:	Band-Gap Dependence of Field Emission From One-Dimensional Nanostructures Grown on N-type and P-type Silicon Substrates.
Authors:	Chang, C. S. Chattopadhyay, S. Chen, L. C. Chen, K. H. Chen, C. W. Chen, Y. F. Collazo, R. Sitar, Z.
Issue Date:	2003-09
Relation:	Physical Review B 68(12):125322
URI:	http://ir.sinica.edu.tw/handle/201000000A/43847
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1098-0121&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1103/physrevb.68.125322
Appears in Collections:	原子與分子科學研究所

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