Focused Ion Beam Induced Nanojunction and Defect Doping as a Building Block for Nanoscale Electronics in GaN Nanowires

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43530

Title:	Focused Ion Beam Induced Nanojunction and Defect Doping as a Building Block for Nanoscale Electronics in GaN Nanowires
Authors:	Dhara, S. Lu, C. Y. Wu, C. T. Hsu, C. W. tu, W. S. Chen, K. H. Wang, Y. L. Chen, L. C. Raj, B.
Issue Date:	2010
Relation:	JOURNAL OF PHYSICAL CHEMISTRY C 114, 15260
URI:	http://ir.sinica.edu.tw/handle/201000000A/43530
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1932-7447&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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