Mechanism of Nanoblister Formation in Ga+ Self-Ion Implanted Gan Nanowires.

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43507

Title:	Mechanism of Nanoblister Formation in Ga+ Self-Ion Implanted Gan Nanowires.
Authors:	Dhara, C. S. Datta, A. Wu, C. T. Chen, K. H. Wang, Y. L. Muto, S. Tanabe, T. Hsu, C. W. Shen, C. H. Chen, L. C. Maruyama, T.
Issue Date:	2005
Relation:	APPLIED PHYSICS LETTERS 86, 1-3
URI:	http://ir.sinica.edu.tw/handle/201000000A/43507
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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