Vth adjustable self-aligned embedded source/drain Si/Ge nanowire FETs and dopant-free NVMs for 3D sequentially integrated circuit

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34707

Title:	Vth adjustable self-aligned embedded source/drain Si/Ge nanowire FETs and dopant-free NVMs for 3D sequentially integrated circuit
Authors:	Chih-Chao Yang Jia-Min Shieh Tung-Ying Hsieh Wen-Hsien Huang Hsing-Hsiang Wang Chang-Hong Shen Tsung-Ta Wu Chun-Yuan Chen Kuei-Shu Chang-Liao Jung-Hau Shiu Meng-Chyi Wu Fu-Liang Yang
Issue Date:	2014-12-15
Conference:	International Electron Devices Meeting (IEDM) (San Francisco, CA USA : IEEE)
URI:	http://ir.sinica.edu.tw/handle/201000000A/34707
Appears in Collections:	應用科學研究中心

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