Poly (3,3′″-didodecylquarterthiophene) field effect transistors with single walled carbon nanotube based source and drain electrodes

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34006

Title:	Poly (3,3′″-didodecylquarterthiophene) field effect transistors with single walled carbon nanotube based source and drain electrodes
Authors:	YY Zhang Y Shi F Chen S Mhaisalkar B S Ong L- J Li
Issue Date:	2007
Relation:	APPLIED PHYSICS LETTERS 91, 223512
URI:	http://ir.sinica.edu.tw/handle/201000000A/34006
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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