Defect selective passivation in GaN epitaxial growth for light emitting diode application

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33792

Title:	Defect selective passivation in GaN epitaxial growth for light emitting diode application
Authors:	Lo, M. -H. Tu, P. -M. Wang, C. -H. Cheng, Y. -J. Hung, C. -W. Hsu, S. -C. Kuo, H. -C. Zan, H. -W. Wang, S. -C. Chang, C. -Y. Liu, C. -M.
Issue Date:	2009-11-01
Relation:	APPLIED PHYSICS LETTERS 95, 211103
URI:	http://ir.sinica.edu.tw/handle/201000000A/33792
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

Show full item record

Last Week
0

Last month
1

checked on Jan 3, 2023

Check