High efficiency light emitting diode with anisotropically etched GaN-sapphire interfac

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33782

Title:	High efficiency light emitting diode with anisotropically etched GaN-sapphire interfac
Authors:	Lo, M. -H. Tu, P. -M. Wang, C. -H. Hung, C. -W. Hsu, S. -C. Cheng, Y. -J. Kuo, H. -C. Zan, H. -W. Wang, S. -C. Chang, C. -Y.
Issue Date:	2009-07-01
Relation:	APPLIED PHYSICS LETTERS 95, 041109
URI:	http://ir.sinica.edu.tw/handle/201000000A/33782
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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