Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1)—structure and electrical properties

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33715

Title:	Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1)—structure and electrical properties
Authors:	Chen, C. P. Hong, M. Kwo, J. Cheng, H. M. Huang, Y. L. Lin, S. Y. Chi, J. Lee, H. Y. Hsieh, Y. F. Mannaerts, J. P.
Issue Date:	2005-03-01
Relation:	JOURNAL OF CRYSTAL GROWTH vol. 278, pp. 638-642
URI:	http://ir.sinica.edu.tw/handle/201000000A/33715
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0022-0248&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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