第 1 到 2 筆結果,共 2 筆。
公開日期 | 題名 | 作者 | 關聯 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2023 | In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | Scientific Reports 13(1), 9197 | |||
2 | 2023 | Persistent Charge Storage and Memory Operation of Top-Gate Transistors Solely Based on Two-dimensional Molybdenum Disulfide | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | NANOTECHNOLOGY 34(30), 305701 |