Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2012 | 1.3 $\mu$ m Room-Temperature Electroluminescence of InGaAs-capped Type-II GaSb/GaAs Quantum Rings | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2013 | Improved 1.3 $\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS 25 (1), 97-99 | | | |
2012 | Long Wavelength Electroluminence of InGaAs-capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Wang, Kai-Wei; Lin, Wei-Hsun; Lin, Shih-Yen | | | | |
2013 | Morphology Manipulation of Type-II GaSb Quantum Dots and Rings and Their Formation Mechanisms | Chen, Hsuan-An; Lin, Wei-Hsun; Wang, Kai-Wei; Pao, Chun-Wei; Lin, Shih-Yen | | | | |
2012 | Room-Temperature Photoluminescence Intensity Enhancement of Type-II GaSb/GaAs Quantum Rings Separated by Thin GaAs Layers | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2012 | Type-II GaSb/GaAs coupled quantum rings: room-temperature luminescence enhancement and recombination lifetime elongation for device applications | Lin, Wei-Hsun; Wang, Kai-Wei; Chang, Shu-Wei; Shih, Min-Hsiung; Lin, Shih-Yen | APPLIED PHYSICS LETTERS 101, 031906 | | | |