公開日期 | 題名 | 作者 | 關聯 | scopus | WOS | 全文 |
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2019 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices | Chin-I Wang; Teng-Jan Chang; Chun-Yuan Wang; Jing-Jong Shyue ; Hsin-Chih Lin; Miin-Jang Chen | RSC Advances 9(2), 592-598 |