Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2015 | 1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy | Cheng-Han Wu; Hsuan-An Chen; Shih-Yen Lin; Chao-Hsin Wu | OPTICS LETTERS vol. 40, no. 16, pp. 3747-3749 | | | |
2015 | A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response | Lung-Hsing Hsu; Shun-Chieh Hsu; Hsin-Ying Lee; Yu-Lin Tsai; Da-Wei Lin; Hao-Chung Kuo; Yi-Chia Hwang; Yin-Han Chen; Jr-Hau He; Yuh-Jen Cheng; Shih-Yen Lin; Chien-Chung Lin | | | | |
2015 | An InN-Based Heterojunction Photodetector with Extended Infrared Response | Lung-Hsing Hsu; Chien-Ting Kuo; Jhih-Kai Huang; Shun-Chieh Hsu; Hsin-Ying Lee; Hao-Chung Kuo; Po-Tsung Lee; Yu-Lin Tsai; Yi-Chia Hwang; Chen-Feng Su; Jr-Hau He; Shih-Yen Lin; Yuh-Jen Cheng; Chien-Chung Lin | OPTICS EXPRESS vol. 23, no. 24, pp. 31150-31162 | | | |
2018 | Atomic Layer Etching of Large-area 2D Materials | Chia-Wei Liu; Kuan-Chao Chen; Shih-Yen Lin | | | | |
2018 | Atomic-layer etching of transition metal dichalcogenides and equivalent selective etching of their hetero-structures | Kuan-Chao Chen; Chia-Wei Liu; Si-Chen Lee; Shih-Yen Lin | | | | |
2018 | Complete selenization of MoS2 to form wafer-scale and layer number controllable MoSe2 films | Yu-Wei Zhang; Jun-Yen Lee; Chao-Hsin Wu; Shih-Yen Lin | | | | |
2018 | Defect Formation and Modulation during Patterning Supported Graphene Sheets Using Focused Ion Beams | Cheng-Lun Wu; Hsiang-Ting Lin; Hsuan-An Chen; Shih-Yen Lin; Min-Hsiung Shih; Chun-Wei Pao | Materials Today Communications 17, 60-68 | | | |
2016 | Enhanced Field-Effect Mobility of MoS2 Transistors Prepared by Chemical Vapor Deposition with Low-Power Oxygen Plasma Treatment | Kuan-Chao Chen; Chong-Rong Wu; Xiang-Rui Chang; Si-Chen Lee; Shih-Yen Lin | | | | |
2016 | Enhanced Responsivities of InAs/GaSb Type-II Superlattice Infrared Photodetectors with Graphene Transparent Electrodes | Hsuan-An Chen; Hsuan-You Chen; Shih-Yen Lin | | | | |
2016 | Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas | Hsuan-An Chen; Tung-Chuan Shih; Hsuan-You Chen; Shih-Yen Lin | JAPANESE JOURNAL OF APPLIED PHYSICS 55(4S), 04EH07 | | | |
2015 | Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas | Hsuan-An Chen; Tung-Chuan Shih; Hsuan-You Chen; Shih-Yen Lin | | | | |
2014 | Epitaxial Growth of Two-Dimensional Crystal Hetero-Structures | Chung-En Chang; Meng-Yu Lin; Shih-Yen Lin | | | | |
2017 | Epitaxially Grown MoS2/Graphene Hetero-structures for Phototransistor Applications | Hsuan-An Chen; Wei-Chan Chen; Hsu Sun; Shih-Yen Lin | | | | |
2016 | Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth | Chong-Rong Wu; Xiang-Rui Chang; Tung-Wei Chu; Hsuan-An Chen; Chao-Hsin Wu; Shih-Yen Lin | NANO LETTERS 16(11), 7093-7097 | | | |
2015 | From GaAs/(AlGa)As Quantum-Well, InAs/GaAs Quantum-Dot Infrared Photodetectors to Type-II InAs/GaSb Superlattice Infrared Photo-diodes | Shih-Yen Lin | | | | |
2015 | GaSb/GaAs Quantum Dots and Rings Grown under Periodical Growth Mode by Using Molecular Beam Epitaxy | Hsuan-An Chen; Tung- Chuan Shih; Shiang-Feng Tang; Ping-Kuo Weng; Yau-Tang Gau; Shih-Yen Lin | JOURNAL OF CRYSTAL GROWTH vol. 425, no. 1, pp. 283-286 | | | |
2016 | Graphene Grown Directly on Al2O3 Dielectric Layers for Transferring-Free Transistor Fabrications | Wei-Chan Chen; Hsuan-An Chen; Chien-Chung Lin; Shih-Yen Lin | | | | |
2017 | Graphene Grown Directly on Sapphire Substrates as the Ohmic Contact Electrodes on MoS2 | Shang-Hsiang Shao; Hsuan-An Chen; Shih-Yen Lin | | | | |
2014 | InAs/GaSb Superlattice Infrared Photo-Diodes with InSb Strain Compensator | Tung-Chuan Shih; Hsuan-An Chen; Shih-Yen Lin | | | | |
2014 | Large Single-Crystal Graphene Grown by CVD | Cheng-Hung Wang; Meng-Yu Lin; Shih-Yen Lin | | | | |