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Showing results 1 to 5 of 5

Issue Date	Title	Author(s)	Relation
2016	Coupled InAs quantum dots and GaSb quantum rings: transition from type-I to type-II band alignment with redshifted but bright emission	H. A. Chen; W. H. Lin; T. C. Shih; S. W. Chang; S. Y. Lin	SCIENTIFIC REPORTS
2018	Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1–xS2	K. C. Chen; C. Y. Jian; Y. J. Chen; S. C. Lee; S. W. Chang; S. Y. Lin	ACS APPLIED MATERIALS & INTERFACES 10(29), 24733-24738
2019	Effect of electrode contact area on drain currents of molybdenum-disulfide field-effect transistors	K. C. Chen; C. W. Liu; S. W. Chang ; S. Y. Lin	IEEE TRANSACTIONS ON ELECTRON DEVICES
2016	Enhancement of field-effect mobility in molybdenum-disulfide transistor through the treatment of low-power oxygen plasma	K. C. Chen; C. R. Wu; X. R. Chang; S. C. Lee; S. W. Chang; S. Y. Lin	JAPANESE JOURNAL OF APPLIED PHYSICS 55, 090302
2013	Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots	C. C. Chang; W. H. Lin; M.-H. Shih; S. Y. Lin; Y. C. Chang

Showing results 1 to 5 of 5

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