| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
| 2012 | 1.3 $\mu$ m Room-Temperature Electroluminescence of InGaAs-capped Type-II GaSb/GaAs Quantum Rings | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
| 2013 | 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots | Nowozin, T.; Bonato, L.; Hogner, A.; Wiengarten, D. Bimberg; Lin, Wei-Hsun; Lin, Shih-Yen; Reyner, C. J.; Liang, Baolai L.; Huffaker, D. L. | APPLIED PHYSICS LETTERS 102, 052115 | | | |
| 2006 | All-organic hot-carrier triodes with thin-film metal base | Ou, Tzu-Min; Cheng, Shiau-Shin; Huang, Chun-Yuan; Wu, Meng-Chyi; Chan, I-Min; Lin, Shih-Yen; Chan, Yi-Jen | Applied Physics Letters vol. 89, no. 18, pp. 183508 | | | |
| 2012 | Broadband InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetector with Bi-Modal Dot Height Distributions | Lin, Wei-Hsun; Lin, Shih-Yen | JOURNAL OF APPLIED PHYSICS vol. 112, no. 3, pp. 034508 | | | |
| 2010 | Broadband Quantum-Dot Infrared Photodetector | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Kung, Shu-Yen; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS 22 (13), 963-965 | | | |
| 2010 | Broadband Quantum-dot Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Kung, Shu-Yen; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
| 2004 | Characteristics of Photonic Crystal Vertical-Cavity Surface-Emitting Lasers | Yang, Hung-Pin D.; Lai, Fang-I.; Chang, Ya-Hsien; Yu, Hsin-Chieh; Sung, Chia-Pin; Kuo, Hao-Chung; Lin, Shih-Yen; Chi, Jim Y. | | | | |
| 2011 | Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots | Hsu, K. S.; Chiu, T. T.; Lin, Wei-Hsun; Chen, K. L.; Shih, M. H.; Lin, Shih-Yen; Chang, Yia-Chung | APPLIED PHYSICS LETTERS vol. 98, no. 5, pp. 051105 | | | |
| 2012 | Current Modulation of n-GaAs Sheet Resistance by Using In-Plane Gates | Chao, Yi-Kai; Lin, Wei-Hsun; Lin, Shih-Yen | | | | |
| 2005 | Device simulation for GaAs/AlGaAs superlattice infrared photodetector with a single current blocking layer | Clames, Jan-Yves; Lin, Shih-Yen; Chi, Jim-Yong; Chou, Shu-Ting; Wu, Meng-Chyi | Journal of Applied Physics vol. 97, no. 6 pp. 064910 | | | |
| 2011 | Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition | Su, Ching-Yuan; Lu, Ang-Yu; Wu, Chih-Yu; Li, Yi-Te; Liu, Keng-Ku; Zhang, Wenjing; Lin, Shih-Yen; Juang, Zheng-Yu; Zhong, Yuan-Liang; Chen, Fu-Rong; Li, Lain-Jong | NANO LETTERS vol. 11, no. 9, pp. 3612–3616 | | | |
| 2004 | Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | JAPANESE JOURNAL OF APPLIED PHYSICS Jpn. J. Appl. Phys. vol. 43, no. 2A, pp. L 167–L 169 | | | |
| 2008 | Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chen, Cheng-Nan; Lin, Wei-Hsun; Chung, Tung-Hsun; Lin, Shih-Yen; Chiu, Pei-Chin; Chyi, Jen-Inn; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 20, no. 14, pp. 1240-1242 | | | |
| 2009 | Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 27, no. 5, pp. 2102-2105 | | | |
| 2008 | Experimentally Determined Electronic Structures of InAs/GaAs Quantum Dots with Different Dot Heights by Using Photoluminescence Excitation Measurements | Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shih-Yen; Chang, Yia-Chung; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi | | | | |
| 2007 | Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | IEEE TRANSACTIONS ON NANOTECHNOLOGY Volume 6, no. 6, pp. 589 – 594 | | | |
| 2013 | GaSb/GaAs Quantum Dots and Quantum Rings for Device Applications | Lin, Shih-Yen | | | | |
| 2011 | GaSb/GaAs Quantum Dots with Type-II Band Alignments Prepared by Molecular Beam Epitaxy for Device Applications | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Chen, Shu-Han | | | | |
| 2012 | Graphene fabrication by using molecualr beam epitaxy | Lin, Meng-Yu; Wang, Pro-Yao; Lin, Shih-Yen | | | | |
| 2012 | Graphene Films Prepared by Molecular Beam Epitaxy at 300 $^o$C | Lin, Meng-Yu; Wu, Meng-Hsun; Guo, Wei-Ching; Wang, Pro-Yao; Lin, Shih-Yen; Lee, Si-Chen | | | | |
