Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2001 | Effect of dilution gas on SiCN films growth using methylamine | Wu, J. J.; Chen, K. H.; Wen, C. Y.; Chen, L. C.; Yu, Y. -C.; Wang, C. -W.; Lin, E. -K. | MATERIALS CHEMISTRY AND PHYSICS 72, 240-244 | | | |
2000 | Effect of H-2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor | Wu, J. -J.; Chen, K. H.; Wen, C. -Y.; Chen, L. C.; Yu, Y. -C.; Wang, C. -W.; Lin, E. -K. | JOURNAL OF MATERIALS CHEMISTRY 10, 783-787 | | | |
1999 | Methylamine growth of SiCN films using ECR-CVD | Wen, C. Y.; Wu, J. J.; Lo, H. J.; Chen, L. C.; Chen, K. H.; Lin, S. T.; Yu, Y. -C.; Wang, C. -W.; Lin, E. -K. | MRS Online Proceedings Library 606, 115 | | | |