| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
| 2005 | Device simulation for GaAs/AlGaAs superlattice infrared photodetector with a single current blocking layer | Clames, Jan-Yves; Lin, Shih-Yen; Chi, Jim-Yong; Chou, Shu-Ting; Wu, Meng-Chyi | Journal of Applied Physics vol. 97, no. 6 pp. 064910 | | | |
| 2007 | Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | IEEE TRANSACTIONS ON NANOTECHNOLOGY Volume 6, no. 6, pp. 589 – 594 | | | |
| 2005 | Growth Rate Effects on InGaAs/GaAs Quantum Dots | Huang, Chun-Yuan; Ou, Tzu-Min; Chang, Wen-Ten; Wu, Meng-Chyi; Shen, Jeng-Jung; Liang, Chiu-Yueh; Lin, Shih-Yen; Chang, Pen; Lin, Tsung-Da; Hong, Minghwei; Kwo, J.; Chi, Jim-Yong | | | | |
| 2005 | he Formation of 1.5 ML InAs/GaAs Quantum Dots after In Situ Annealing | Huang, Chun Yuan; Chou, Shu-Ting; Wu, Meng-Chyi; Egorov, Viacheslav; Lin, Shih-Yen; Chi, Jim-Yong; Chen, Chung-Yu; Horng, Sheng-Fu; Hsu, Bang-Yu; Chi, C. C. | | | | |
| 2005 | High Responsivity Quantum-Dot Infrared Photodetector with Al0.1Ga0.9As Blocking Layers at Both Sides of the Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | JOURNAL OF CRYSTAL GROWTH vol. 278, pp. 351-354 | | | |
| 2004 | High Responsivity Quantum-Dot Infrared Photodetector with Two Al0.1Ga0.9As Blocking Layers at Both Sides of The Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | | | | |
| 2005 | High-Performance 30-Period Quantum-Dot Infrared Photodetector | Chou, Shu-Ting; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wang, Jyh-Shyang; Wu, Meng-Chyi; Chen, Jenn-Fang | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 23, no. 3 pp. 1129-1131 | | | |
| 2005 | InAs/GaAs Quantum-Dot Infrared Photodetectors with Different Doping Densities | Chou, Shu-Ting; Tsai, Cheng-Shuan; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wu, Meng-Chyi | | | | |
| 2006 | Influence of Doping Density on the Normal Incident Absorption of Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | Applied Physics Letters vol. 88, no. 17, pp. 173511 | | | |
| 2007 | Influences of Silicon Doping in Quantum Dot Layers on Optical Characteristics of InAs/GaAs Quantum Dot Infrared Photodetector | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Tsai, Cheng-Shuan; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong; Hsu, Bang-Yu; Chi, C. C. | THIN SOLID FILMS vol 515, no. 10, pp. 4459-4461 | | | |
| 2005 | Influences of Silicon Doping of InAs Quantum Dot Layers on Optical Characteristics of InAs/GaAs Quantum Dot Infrared Photodetector | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong; Chen, Chung-Yu; Horng, Sheng-Fu; Hsu, Bang-Yu; Chi, C. C. | | | | |
| 2005 | Quantum Infrared Photodetectors – QWIP, SLIP and QDIP | Lin, Shih-Yen; Chou, Shu-Ting; Tsai, Cheng-Hsuan; Wu, Meng-Chyi; Chi, Jim-Yong; Tang, Shiang-Feng; Chiang, Cheng-Der | | | | |
| 2005 | Quantum-Dot Infrared Photodetectors with P-Type Doped GaAs Barrier Layers | Chou, Shu-Ting; Tsai, Cheng-Hsuan; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 17, no. 11, pp. 2409-2411 | | | |
| 2005 | Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Tsai, Cheng-Shuan; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 23, no. 5, pp. 1909-1912 | | | |
| 2005 | The Influence of Doping Densities on The Performances of Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Tsai, Cheng-Shuan; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Ryzhii, V.; Wu, Meng-Chyi | | | | |
| 2005 | The Influence of Growth Temperature on InAs/GaAs Quantum Dots | Huang, Chun-Yuan; Ou, Tzu-Min; Chang, Wen-Ten; Wu, Meng-Chyi; Shen, Jeng-Jung; Liang, Chiou-Yue; Lin, Shih-Yen; Chi, Jim-Yong | Journal of Taiwan Vacuum Society vol. 18, no. 3, pp. 59-62 | | | |
| 2004 | The Influence of Quantum-Dot Period on High-Performance InAs/GaAs Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Hsiao, R. S.; Wei, Li-Chung; Wang, Jyh-Shyang; Chi, Jim-Yong | | | | |
| 2004 | The Observation of Photoluminescence Decay for MBE Grown 1.3 um InGaAsN/GaAs Quantum Well Structure | Hsiao, R. S.; Liang, Chiu-Yueh; Lin, Shih-Yen; Wang, Jyh-Shyang; Chi, Jim-Yong | | | | |
| 2004 | The Photoluminescence Characteristics and Surface Morphologies of InAs/GaAs Quantum Dots Under Different Growth Rates | Lin, Shih-Yen; Wei, Li-Chung; Wang, Jyh-Shyang; Chi, Jim-Yong; Chou, Shu-Ting; Wu, Meng-Chyi | | | | |
| 2005 | The Surface Morphology and Optical Characteristics for InAs/GaAs Quantum Dots with Different Coverag | Chang, Wen-Ten; Chou, Shu-Ting; Huang, Chun-Yuan; Ou, Tzu-Min; Wu, Meng-Chyi; Shen, Jeng-Jung; Lin, Shih-Yen; Chi, Jim-Yong | Journal of Taiwan Vacuum Society vol. 18, no. 3, pp. 68-71 | | | |
