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Wang, Kai-Wei
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Showing results 2 to 6 of 6
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2013
Improved 1.3 $\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi
IEEE PHOTONICS TECHNOLOGY LETTERS 25 (1), 97-99
2012
Long Wavelength Electroluminence of InGaAs-capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
Wang, Kai-Wei; Lin, Wei-Hsun; Lin, Shih-Yen
2013
Morphology Manipulation of Type-II GaSb Quantum Dots and Rings and Their Formation Mechanisms
Chen, Hsuan-An; Lin, Wei-Hsun; Wang, Kai-Wei; Pao, Chun-Wei; Lin, Shih-Yen
2012
Room-Temperature Photoluminescence Intensity Enhancement of Type-II GaSb/GaAs Quantum Rings Separated by Thin GaAs Layers
Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi
2012
Type-II GaSb/GaAs coupled quantum rings: room-temperature luminescence enhancement and recombination lifetime elongation for device applications
Lin, Wei-Hsun; Wang, Kai-Wei; Chang, Shu-Wei; Shih, Min-Hsiung; Lin, Shih-Yen
APPLIED PHYSICS LETTERS 101, 031906