| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
| 2011 | GaSb/GaAs Quantum Dots with Type-II Band Alignments Prepared by Molecular Beam Epitaxy for Device Applications | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Chen, Shu-Han | | | | |
| 2010 | High Temperature Operation GaSb/GaAs Quantum dot Infrared Photodetectors | Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
| 2011 | High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Kung, Shu-Yen; Wu, Shug-Yi; Lin, Shih-Yen | IEEE PHOTONICS TECHNOLOGY LETTERS IEEE Photonics Technology Lett. vol. 23, no. 2, pp. 106-108 | | | |
| 2013 | Improved 1.3 $\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS 25 (1), 97-99 | | | |
| 2013 | In-Plane Gate Transistors for Photodetector Applications | Liao, Yu-An; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Wen-Hao; Chyi, Jen-Inn; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 34, no. 6, pp. 780-782 | | | |
| 2012 | In-Plane Gate Transistors with 40 $\mu$m Wide Channel Width | Chung, Tung-Hsun; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Shu-Wei; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 33, no. 8, pp. 1129-1131 | | | |
| 2009 | InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 21, no. 18, pp. 1332-1334 | | | |
| 2009 | InGaAs-Capped InAs/GaAs quantum-Dot Infrared Photodetectors with 10.4 um Responses | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Chen; Lin, Shih-Yen | | | | |
| 2012 | Long Wavelength Electroluminence of InGaAs-capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Wang, Kai-Wei; Lin, Wei-Hsun; Lin, Shih-Yen | | | | |
| 2013 | Morphology Manipulation of Type-II GaSb Quantum Dots and Rings and Their Formation Mechanisms | Chen, Hsuan-An; Lin, Wei-Hsun; Wang, Kai-Wei; Pao, Chun-Wei; Lin, Shih-Yen | | | | |
| 2020 | Photonic crystal circular nanobeam cavity laser with type-II GaSb/GaAs quantum rings as gain material | Lin, Hsiang-Ting; Hsu, Kung-Shu; Chang, Chih-Chi; Lin, Wei-Hsun; Lin, Shih-Yen ; Chang, Shu-Wei ; Chang, Yia-Chung ; Shih, Min-Hsiung | SCIENTIFIC REPORTS 10, 4757 | | | |
| 2009 | Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors | Lin, Shih-Yen; Chou, Shu-Ting; Lin, Wei-Hsun | | | | |
| 2008 | Quantum-Well/Quantum-Dot Mixed-Mode Infrared Photodetectors Prepapred by Molecular Beam Epitaxy | Chou, Shu-Ting; Tseng, Chi-Che; Chen, Cheng-Nan; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
| 2012 | Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings | Lin, Wei-Hsun; Lin, Meng-Yu; Wu, Shung-Yi; Lin, Shih-Yen | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 24, no. 14, pp. 1203-1205 | | | |
| 2010 | Room-Temperature Operation Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diode | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn | APPLIED PHYSICS LETTERS vol. 96, no. 12, pp. 123503 | | | |
| 2012 | Room-Temperature Photoluminescence Intensity Enhancement of Type-II GaSb/GaAs Quantum Rings Separated by Thin GaAs Layers | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
| 2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE Journal of Quantum Electronics 47 [3] 335-339 | | | |
| 2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE JOURNAL OF QUANTUM ELECTRONICS vol. 47, no. 3, pp. 335-339 | | | |
| 2011 | The Influence of Background As on GaSb Quantum Dots | Lin, Wei-Hsun; Wu, Mong-Hsun; Wu, Shung-Yi; Tseng, Chi-Che; Lin, Shih-Yen; Wu, Mong-Chyi | | | | |
| 2012 | The Influence of Background As on GaSb/GaAs Quantum Dots and Its Application in Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shung-Yi; Wu, Meng-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | Physica Status Solidi C vol. 9, no. 2, pp. 314-317 | | | |
