Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2013 | GaSb/GaAs Quantum Dots and Quantum Rings for Device Applications | Lin, Shih-Yen | | | | |
2011 | GaSb/GaAs Quantum Dots with Type-II Band Alignments Prepared by Molecular Beam Epitaxy for Device Applications | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Chen, Shu-Han | | | | |
2012 | Graphene fabrication by using molecualr beam epitaxy | Lin, Meng-Yu; Wang, Pro-Yao; Lin, Shih-Yen | | | | |
2012 | Graphene Films Prepared by Molecular Beam Epitaxy at 300 $^o$C | Lin, Meng-Yu; Wu, Meng-Hsun; Guo, Wei-Ching; Wang, Pro-Yao; Lin, Shih-Yen; Lee, Si-Chen | | | | |
2011 | Graphitic Carbon Film Formation under Ni Templates by Radiofrequency Sputtering for Transparent Electrode Applications | Lin, Meng-Yu; Sheng, Yung-Shuan; Chen, Shu-Han; Su, Ching-Yuan; Li, Lain-Jong; Lin, Shih-Yen | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 29, no. 6, pp. 061202 | | | |
2005 | Growth Rate Effects on InGaAs/GaAs Quantum Dots | Huang, Chun-Yuan; Ou, Tzu-Min; Chang, Wen-Ten; Wu, Meng-Chyi; Shen, Jeng-Jung; Liang, Chiu-Yueh; Lin, Shih-Yen; Chang, Pen; Lin, Tsung-Da; Hong, Minghwei; Kwo, J.; Chi, Jim-Yong | | | | |
2005 | he Formation of 1.5 ML InAs/GaAs Quantum Dots after In Situ Annealing | Huang, Chun Yuan; Chou, Shu-Ting; Wu, Meng-Chyi; Egorov, Viacheslav; Lin, Shih-Yen; Chi, Jim-Yong; Chen, Chung-Yu; Horng, Sheng-Fu; Hsu, Bang-Yu; Chi, C. C. | | | | |
2000 | High Performance InAs/GaAs Quantum Dot Infrared photodetector (QDIP) Operated over 70K | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | | | | |
2009 | High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition | Wang, Yung-Sheng; Chang, Shoou-Jinn; Chou, Shu-Ting; Lin, Shih-Yen; Lin, Wei | JAPANESE JOURNAL OF APPLIED PHYSICS vol. 48, no. 4, pp. 04C108 | | | |
2006 | High Responsivity of InGaAs/InP Quantum-Well Infrared Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition | Chou, Shu-Ting; Chen, Shang-Fu; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2005 | High Responsivity Quantum-Dot Infrared Photodetector with Al0.1Ga0.9As Blocking Layers at Both Sides of the Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | JOURNAL OF CRYSTAL GROWTH vol. 278, pp. 351-354 | | | |
2004 | High Responsivity Quantum-Dot Infrared Photodetector with Two Al0.1Ga0.9As Blocking Layers at Both Sides of The Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | | | | |
2000 | High Temperature Operated (≧250 K) Photovoltaic- Photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen | | | | |
2010 | High Temperature Operation GaSb/GaAs Quantum dot Infrared Photodetectors | Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2005 | High-Performance 30-Period Quantum-Dot Infrared Photodetector | Chou, Shu-Ting; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wang, Jyh-Shyang; Wu, Meng-Chyi; Chen, Jenn-Fang | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 23, no. 3 pp. 1129-1131 | | | |
2001 | High-Performance InAs/GaAs Quantum-Dot Infrared Photodetector with Single-sided Al0.3Ga0.7As Blocking Layer | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | APPLIED PHYSICS LETTERS vol. 78, no. 18, pp. 2784-2786 | | | |
2011 | High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Kung, Shu-Yen; Wu, Shug-Yi; Lin, Shih-Yen | IEEE PHOTONICS TECHNOLOGY LETTERS IEEE Photonics Technology Lett. vol. 23, no. 2, pp. 106-108 | | | |
2006 | High-Temperature Operation Normal Incident 256x256 InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array | Tang, Shiang-Feng; Chiang, Cheng-Der; Weng, Ping-Kuo; Gau, Yau-Tang; Ruo, Jihnn-Jye; Yang, San-Te; Shih, Chih-Chang; Lin, Shih-Yen; Lee, Si-Chen | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 18, no. 8, pp. 986-988 | | | |
2013 | Improved 1.3 $\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS 25 (1), 97-99 | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 31, no. 11, pp. 1227-1229 | | | |