Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2005 | Device simulation for GaAs/AlGaAs superlattice infrared photodetector with a single current blocking layer | Clames, Jan-Yves; Lin, Shih-Yen; Chi, Jim-Yong; Chou, Shu-Ting; Wu, Meng-Chyi | Journal of Applied Physics vol. 97, no. 6 pp. 064910 | | | |
2011 | Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition | Su, Ching-Yuan; Lu, Ang-Yu; Wu, Chih-Yu; Li, Yi-Te; Liu, Keng-Ku; Zhang, Wenjing; Lin, Shih-Yen; Juang, Zheng-Yu; Zhong, Yuan-Liang; Chen, Fu-Rong; Li, Lain-Jong | NANO LETTERS vol. 11, no. 9, pp. 3612–3616 | | | |
2004 | Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | JAPANESE JOURNAL OF APPLIED PHYSICS Jpn. J. Appl. Phys. vol. 43, no. 2A, pp. L 167–L 169 | | | |
2008 | Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chen, Cheng-Nan; Lin, Wei-Hsun; Chung, Tung-Hsun; Lin, Shih-Yen; Chiu, Pei-Chin; Chyi, Jen-Inn; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 20, no. 14, pp. 1240-1242 | | | |
2009 | Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 27, no. 5, pp. 2102-2105 | | | |
2008 | Experimentally Determined Electronic Structures of InAs/GaAs Quantum Dots with Different Dot Heights by Using Photoluminescence Excitation Measurements | Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shih-Yen; Chang, Yia-Chung; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi | | | | |
2007 | Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | IEEE TRANSACTIONS ON NANOTECHNOLOGY Volume 6, no. 6, pp. 589 – 594 | | | |
2013 | GaSb/GaAs Quantum Dots and Quantum Rings for Device Applications | Lin, Shih-Yen | | | | |
2011 | GaSb/GaAs Quantum Dots with Type-II Band Alignments Prepared by Molecular Beam Epitaxy for Device Applications | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Chen, Shu-Han | | | | |
2012 | Graphene fabrication by using molecualr beam epitaxy | Lin, Meng-Yu; Wang, Pro-Yao; Lin, Shih-Yen | | | | |
2012 | Graphene Films Prepared by Molecular Beam Epitaxy at 300 $^o$C | Lin, Meng-Yu; Wu, Meng-Hsun; Guo, Wei-Ching; Wang, Pro-Yao; Lin, Shih-Yen; Lee, Si-Chen | | | | |
2011 | Graphitic Carbon Film Formation under Ni Templates by Radiofrequency Sputtering for Transparent Electrode Applications | Lin, Meng-Yu; Sheng, Yung-Shuan; Chen, Shu-Han; Su, Ching-Yuan; Li, Lain-Jong; Lin, Shih-Yen | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 29, no. 6, pp. 061202 | | | |
2005 | Growth Rate Effects on InGaAs/GaAs Quantum Dots | Huang, Chun-Yuan; Ou, Tzu-Min; Chang, Wen-Ten; Wu, Meng-Chyi; Shen, Jeng-Jung; Liang, Chiu-Yueh; Lin, Shih-Yen; Chang, Pen; Lin, Tsung-Da; Hong, Minghwei; Kwo, J.; Chi, Jim-Yong | | | | |
2005 | he Formation of 1.5 ML InAs/GaAs Quantum Dots after In Situ Annealing | Huang, Chun Yuan; Chou, Shu-Ting; Wu, Meng-Chyi; Egorov, Viacheslav; Lin, Shih-Yen; Chi, Jim-Yong; Chen, Chung-Yu; Horng, Sheng-Fu; Hsu, Bang-Yu; Chi, C. C. | | | | |
2000 | High Performance InAs/GaAs Quantum Dot Infrared photodetector (QDIP) Operated over 70K | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | | | | |
2009 | High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition | Wang, Yung-Sheng; Chang, Shoou-Jinn; Chou, Shu-Ting; Lin, Shih-Yen; Lin, Wei | JAPANESE JOURNAL OF APPLIED PHYSICS vol. 48, no. 4, pp. 04C108 | | | |
2006 | High Responsivity of InGaAs/InP Quantum-Well Infrared Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition | Chou, Shu-Ting; Chen, Shang-Fu; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2005 | High Responsivity Quantum-Dot Infrared Photodetector with Al0.1Ga0.9As Blocking Layers at Both Sides of the Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | JOURNAL OF CRYSTAL GROWTH vol. 278, pp. 351-354 | | | |
2004 | High Responsivity Quantum-Dot Infrared Photodetector with Two Al0.1Ga0.9As Blocking Layers at Both Sides of The Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | | | | |
2000 | High Temperature Operated (≧250 K) Photovoltaic- Photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen | | | | |