Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
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2009 | The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation | Das, C. R.; Dhara, S.; Hsu, H. C.; Chen, L. C.; Jeng, Y. R.; Bhaduri, A. K.; Raj, Baldev; Chen, K. H.; Albert, S. K. | JOURNAL OF RAMAN SPECTROSCOPY 40, 1881-1884 |