| 公開日期 | 題名 | 作者 | 關聯 | scopus | WOS | 全文 |
|---|---|---|---|---|---|---|
| 2015 | Dopant Morphology as the Factor Limiting Graphene Conductivity | M. Hofmann; Y. P. Hsieh; K. W. Chang; H. G. Tsai; T. T. Chen | SCIENTIFIC REPORTS 5:17393 | |||
| 2008 | Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures | T. T. Chen; Y. P. Hsieh; C. M. Wei; Y. F. Chen; L. C. Chen; K. H. Chen; Y. H. Peng; C. H. Kuan | NANOTECHNOLOGY 19, 365705 | |||
| 2008 | Electroluminescence Enhancement of SiGe/Si Multiple Quantum Wells through Nanowall Structures | T. T. Chen; Ya-Ping Hsieh; C. M. Wei; Yang-Fang Chen; Li-Chyong Chen; K. H. Chen; Y. H. Peng; C. H. Kuan | NANOTECHNOLOGY 19:365705 | |||
| 2007 | Strong Luminescence from Strain Relaxed InGaN/GaN Nanotips for Highly Efficient Light Emitters | H. J. Chang; Ya-Ping Hsieh; T. T. Chen; Yang-Fang Chen; Chi-Te Liang; T. Y. Lin; S. C. Tseng; Li-Chyong Chen | OPTICS EXPRESS 15(15), 9357-9365 |
