| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2001 | Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectrics | Z.C. Wu; C.C. Chiang; W.H. Wu; M.C. Chen; S. M. Jeng; L.J. Li; S. M. Jang; C.H. Yu; M.S. Liang | IEEE ELECTRON DEVICE LETTERS 22, 263 |
