Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2008 | Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots | Hsu, C. W.; Ganguly, A.; Liang, C. H.; Hung, Y. Y.; Wu, C. T.; Hsu, G. M.; Chen, Y. F.; Chen, C. C.; Chen, K. H.; Chen, L. C. | ADVANCED FUNCTIONAL MATERIALS 18, 938-942 | | | |
2010 | Enhancement of the energy photoconversion efficiency through crystallographic etching of a c-plane GaN thin film | Basilio, M.; Hsu, Y. K.; Tu, W. H.; Hsu, G. M.; Chen, L. C.; Chen, K. H. | JOURNAL OF MATERIALS CHEMISTRY 20, 8118-8125 | | | |
2013 | Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation | Hwang, J. S.; Liu, T. Y.; Chattopadhyay, S.; Hsu, G. M.; Basilio, A. M.; Chen, H. W.; Hsu, Y. K.; Tu, W. H.; Lin, Y. G.; Chen, K. H.; Li, C. C.; Wang, S. B.; Chen, H. Y.; Chen, L. C. | NANOTECHNOLOGY 24, 055401 | | | |
2008 | High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment | Hsiao, C. L.; Liu, T. W.; Wu, C. T.; Hsu, H. C.; Chen, L. C.; Gällström, A.; Holtz, P.; Hsu, G. M.; Chen, K. H. | APPLIED PHYSICS LETTERS 92, 111914 | | | |
2006 | Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature | Dhara, S. K.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Nair, K. G. M.; Hsu, G. M.; Chen, L. C.; Chen, K. H.; Santhakumar, K.; Soga, T. | APPLIED PHYSICS LETTERS 88,241904,3 pages | | | |
2005 | Optical characterization of GaN by N+ implantation into GaAs at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Nair, K. G. M.; Hsu, G. M.; Chen, L. C.; Chen, K. H.; Santhakumar, K.; Soga, T. | APPLIED PHYSICS LETTERS 87, 261915 | | | |
2005 | Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition | Shi, S. C.; Chen, C. F.; Hsu, G. M.; Hwang, J. S.; Chattopadhyay, S.; Lan, Z. H.; Chen, K. H.; Chen, L. C. | APPLIED PHYSICS LETTERS 87, 203103 | | | |