第 1 到 4 筆結果,共 4 筆。
公開日期 | 題名 | 作者 | 關聯 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2023 | In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | Scientific Reports 13(1), 9197 | |||
2 | 2021 | Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS2/Graphene Heterostructures for Memory Device Applications | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | ACS Applied Materials & Interfaces 13(38), 45864-45869 | |||
3 | 2020 | In-plane Gate Graphene Transistors Fabricated by Using Electron Beam Lithography | Chun-Wei Huang; Po-Cheng Tsai; Shoou-Jinn Chang; Shih-Yen Lin | ||||
4 | 2020 | Luminescence Enhancement and Dual-Color Emission of Stacked Mono-layer 2D Materials | Po-Cheng Tsai; Hon-Chin Huang; Chun-Wei Huang; Shoou-Jinn Chang; Shih-Yen Lin | NANOTECHNOLOGY 31(36), 365702 |