Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2016 | Atomic Scale Electronic Structure in WSe2-MoSe2 Lateral Heterojunction | Christopher J. Butler; Y. Tseng; C. R. Hsing; Y. M. Wu; Raman Sankar; M. F. Wang; C. M. Wei; F. C. Chou; Minn-Tsong Lin invited | | | | |
2017 | Atomically Resolved STM Characterization of the 3-D Dirac Semimetal Cd3As2 (Oral) | Christopher J. Butler; Y. Tseng; C. R. Hsing; Y. M. Wu; Raman Sankar; M. F. Wang; C. M. Wei; F. C. Chou; Minn-Tsong Lin | | | | |
2016 | Atomically resolved su rface characterization of the 3-D Dirac semimetal Cd3As2 (Poster) | Christopher John Butler; Y. Tseng; C. R. Hsing; Raman Sankar; M. F. Wang; C. M. Wei; F. C. Chou; Minn-Tsong Lin | | | | |
2019 | Contrasting the Surface Phonon Dispersion of Pb0.7Sn0.3Se in Its Topologically Trivial and Nontrivial Phases | S. Kalish; C. Chamon; M. El-Batanouny; L. H. Santos; R. Sankar ; F. C. Chou | PHYSICAL REVIEW LETTERS 122(11), 116101 | | | |
2016 | High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors | R. K. Ulaganathan; Y.-Y. Lu; C.-J. Kuo; S. R. Tamalampudi; R. Sankar; K. M. Boopathi; A. Anand; K. Yadav; R. J. Mathew; C. R. Liu; F. C. Chou; Y.-T. Chen | NANOSCALE 8, 2284-2292 | | | |
2015 | Intrinsic electron mobility exceeding 103 cm2/Vs in multilayer InSe FETs | S. Sucharitakul; N. J. Goble; U. R. Kumar; R. Sankar; Z. Bogorad; F. C. Chou; Y.-T. Chen; X. P. A. Gao | NANO LETTERS 10(6), 3815-3819 | | | |
2016 | Large transverse Hall-like signal in topological Dirac semimetal Cd3As2 | Shih-Ting Guo; R. Sankar; Yung-Yu Chien; Tay-Rong Chang; Horng-Tay Jeng; Guang-Yu Guo; F. C. Chou; Wei-Li Lee | Scientific reports 6, 27487 | | | |
2018 | MCD and PEEM Studies of Magnetic Metal Thin Films Deposited on Topological Insulator (Poster) | K. H. Ou Yang; Y. H. Chu; Z. Y. Huang; C. W. Shih; N. C. Hsu; R. Sanker; F. C. Chou; C. I. Lu; D. H. Wei; F. H. Chang; H. J. Lin; Minn- Tsong Lin | | | | |
2015 | Organic Monolayer Protected Topological Surface State | H. H. Yang; Y. H. Chu; C. I. Lu; Christopher John Butler; Raman Sankar; F. C. Chou; Minn-Tsong Lin | Nano Letters 15, 6896-6900 | | | |
2016 | Protecting Topological Surface State by Organic Monolayer (Poster) | H. H. Yang; Y. H. Chu; C. I. Lu; Christopher John Butler; Raman Sankar; F. C. Chou; Minn-Tsong Lin | | | | |
2016 | Quasiparticle Scattering in the Rashba Semiconductor BiTeBr: The Roles of Spin and Defect Lattice Site | Christopher John Butler; P. Y. Yang; Raman Sankar; Y. N. Lien; C. I. Lu; L.Y. Chang; C. H. Chen; C. M. Wei; F. C. Chou; Minn-Tsong Lin | ACS Nano 10(10), 9361-9369 | | | |
2014 | Room temperature agglomeration for the growth of BiTeI single crystal with giant Rashba effect | R. Sankar; I. Panneer Muthuselvam; Christopher John Butler; S.-C. Liou; B. H Chen; M.-W. Chu; W. L. Lee; Minn-Tsong Lin; R. Jayavel; F. C. Chou | CRYSTENGCOMM 16, 8678 | | | |
2019 | Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor | C. R. P. Inbaraj; V. K. Gudelli; R. J. Mathew; R. K. Ulaganathan; R. Sankar; H. Y. Lin; H.-I Lin; Y.-M. Liao; H.-Y. Cheng; K.-H. Lin ; F. C. Chou; Y.-T. Chen ; C.-H. Lee; G.-Y. Guo; Y.-F. Chen | ACS APPLIED MATERIALS & INTERFACES 11(27), 24269-24278 | | | |
2016 | Spin and Defect Characteristics of Quasiparticle Scattering in Rashba Semiconductor BiTeX | Christopher John Butler; P. Y. Yang; Raman Sankar; Y. N. Lien; C. I. Lu; L. Y. Chang; C. H. Chen; C. M. Wei; F. C. Chou; Minn-Tsong Lin invited | | | | |
2018 | Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor | C. R. P. Inbaraj; R. J. Mathew; G. Haider; T.-P. Chen; R. K. Ulaganathan; R. Sankar; K. P. Bera; Y.-M. Liao; M. Kataria; H.-I Lin; F. C. Chou; Y.-T. Chen; C.-H. Lee; Y.-F. Chen | Nanoscale 10(39), 18642-18650 | | | |
2020 | Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors | Gaurav Pande; J. Y. Siao; W. L. Chen; C. J. Lee; Raman Sankar ; Y. M. Chang; C. D. Chen ; W. H. Chang; F. C. Chou; Minn-Tsong Lin | ACS APPLIED MATERIALS & INTERFACES 12(16), 18667-18673 | | | |
2016 | Ultra‐Thin Layered Ternary Single Crystals [Sn(SxSe1−x)2] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates | P. Perumal; R. K. Ulaganathan; R. Sankar; Y.-M Liao; T.-M. Sun; M.-W. Chu; F. C. Chou; Y.-T. Chen; M.-H. Shih; Y.-F. Chen | ADVANCED FUNCTIONAL MATERIALS 26(21), 3630-3638 | | | |