Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
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2011 | Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering | Junaid, M.; Lundin, D.; Palisaitis, J.; Hsiao, C. L.; Darakchieva, V.; Jensen, J.; Persson, P. O. A.; Sandstrom, P.; Lai, W. J.; Chen, L. C.; Chen, K. H.; Helmersson, U.; Hultman, L.; Birch, J. | JOURNAL OF APPLIED PHYSICS 110, 123519 |